dec.2012.ver1.0 magnachipsemiconductorltd . 1 mdq23n50d nchannelmosfet500v . absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 23 a t c =100 o c 14.6 a pulseddraincurrent (1) i dm 92 a powerdissipation t c =25 o c p d 290 w derateabove25 o c 2.33 w/ o c repetitiveavalancheenergy (1) e ar 29 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 950 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c *i d limitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 40 o c/w thermalresistance,junctiontocase (1) r jc 0.44 mdq23n50d nchannelmosfet500v,23.0a,0.245 features v ds =500v i d =23.0a @v gs =10v r ds(on) 0.245 @v gs =10v applications powersupply hid lighting generaldescription these nchannel mosfet are produced using advanced magnachips mosfet technology, which provides low on state resistance, high switching performance and excellen t quality. these devices are suitable device for smps, high speed switchingandgeneralpurposeapplications. d g s to247 g d s
dec.2012.ver1.0 magnachipsemiconductorltd . 2 mdq23n50d nchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus MDQ23N50DTP 55~150 o c to247 tube pbfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =11.5a 0.2 0.245 forwardtransconductance g fs v ds =30v,i d =11.5a 13 s dynamiccharacteristics totalgatecharge q g v ds =400v,i d =23a,v gs =10v 76 nc gatesourcecharge q gs 16 gatedraincharge q gd 20 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 3280 pf reversetransfercapacitance c rss 23 outputcapacitance c oss 325 turnondelaytime t d(on) v gs =10v,v ds =250v,i d =23a, r g =25 50 ns risetime t r 155 turnoffdelaytime t d(off) 230 falltime t f 195 drainsourcebodydiodecharacteristics maximumcontinuosdrainto sourcediodeforwardcurrent i s 23 a sourcedraindiodeforward voltage v sd i s =23a,v gs =0v 1.4 v bodydiodereverserecovery time t rr i f =23a,dl/dt=100a/s (3) 450 ns bodydiodereverserecovery charge q rr 6 c notes: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof15 0c. 2.pulsetest:pulsewidth300us,dutycycle2%,pul sewidthlimitedbyjunctiontemperaturet j(max) =150c. 3.i sd 23a,di/dt200a/us,v dd bvdss,r g =25,startingt j =25c 4.l=3.24mh,i as =23a,v dd =50v,r g =25,startingt j =25c
dec.2012.ver1.0 magnachipsemiconductorltd . 3 mdq23n50d nchannelmosfet500v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 2 3 4 5 6 7 8 0.1 1 10 100 55 25 150 *notes; 1.vds=30v i d (a) v gs [v] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 10 20 30 40 50 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 vgs=20v vgs=10v r ds(on) [ ] i d current[a] 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 45 50 55 60 65 notes 1.250 ? ?? ? pulsetest 2.t c =25 v gs =4.5v =5.0v =6.0v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =23a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c]
dec.2012.ver1.0 magnachipsemiconductorltd . 4 mdq23n50d nchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9 maximumsafeoperatingarea fig.10 maximum drain current vs. case temperature fig.11transientthermalresponsecurve fig.12 single pulse maximum power dissipation 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 24 i d ,draincurrent[a] t c ,casetemperature[ ] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.43 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 100v 250v 400v note:i d =23a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 1 10 0 1000 2000 3000 4000 5000 6000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 0.01 0.1 1 0 50000 singlepulse r thjc =0.43 /w t c =25 power(w) pulsewidth(s)
dec.2012.ver1.0 magnachipsemiconductorltd . 5 mdq23n50d nchannelmosfet500v e d q l l1 e b b2 b1 a a1 c d1 e1 p s a2 e2 physicaldimension to247 dimensionsareinmillimeters,unlessotherwisespe cified dimension min(mm) max(mm) a 4.70 5.31 a1 2.20 2.60 a2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 d 20.30 21.46 d1 13.08 e 15.45 16.26 e1 13.06 14.02 e2 4.32 5.49 e 5.45bsc l 19.81 20.57 l1 4.50 p 3.50 3.70 q 5.38 6.20 s 6.15bsc
dec.2012.ver1.0 magnachipsemiconductorltd . 6 mdq23n50d nchannelmosfet500v disclaimer: theproductsarenotdesignedforuseinhostileenvironm ents,including,withoutlimitation,aircraft,nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applicationsdosoattheirownriskandagreetofully defendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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